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| (R) SGSF313 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s HIGH VOLTAGE CAPABILITY (450V VCEO) VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGE COMPLETE CHARACTERIZATION AT 100 oC APPLICATION SWITCH MODE POWER SUPPLIES s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s 1 2 3 DESCRIPTION The device is high voltage NPN FAST-SWITCHING transistor designed to be used as switch in high efficency OFF-LINE (220V mains) switching power supplies for consumer applications like sets VCR's and monitors. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEX V CES V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter Collector-Emitter Voltage (V BE = -2.5V) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Valu e 1000 1000 450 10 7 10 3 6 70 -65 to 150 150 Un it V V V V A A A A W o o C C January 1999 1/6 SGSF313 THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max 1.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V CE(sat ) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Test Cond ition s V CE = 1000 V V CE = 1000 V V EC = 450 V I C = 100 mA IC IC IC IC IC = = = = = 1A 2A 2.5 A 1A 2A IB IB IB IB IB L = 25 mH = = = = = 0.1 0.4 0.5 0.1 0.4 A A A A A 450 0.5 0.45 0.75 0.6 0.8 1.1 1.25 1.3 12 15 6 10 30 45 T j = 125 C o Min. Typ . Max. 10 100 100 Un it A A A V V V V V V V V V T j = 125 o C o T j = 125 C V BE(s at) Base-Emitt er Saturation Voltage DC Current Gain IC = 1 A IC = 2 A I C = 2.5 A IC IC IC IC IC IC IC = = = = = = = 1 1 2 5 1 1 2 A A A mA A A A I B = 0.1 A I B = 0.4 A I B = 0.5 A V CE V CE V CE V CE V CE V CE V CE = 2.5 V =5V =1V =5V o = 2.5 V T j = 125 C =5V Tj = 125 o C o =1V Tj = 125 C h F E 25 28 12 0.5 1.5 0.18 0.5 1.1 0.13 0.5 1.1 0.13 1 0.1 2 0.2 3 0.3 1 2.5 0.3 s s s s s s s s s s s s s t on ts tf t on ts tf t on ts tf ts tf ts tf RESISTIVE LO AD Turn-on Time Storage Time Fall Time RESISTIVE LO AD Turn-on Time Storage Time Fall Time RESISTIVE LO AD Turn-on Time Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time V CC = 250 V I B1 = 0.5 A I C = 2.5 A I B2 = -1 A V CC = 250 V I C = 2.5 A I B2 = -1 A I B1 = 0.5 A With Antisaturation Network V CC = 250 V I C = 2.5 A V BE(of f)= -5 V I B1 = 0.5 A I C = 2.5 A V BE(of f) = -5 V V CL = 300 V I C = 2.5 A V BE(of f) = -5 V V CL = 300 V o T j = 100 C hFE =5A R BB = 2 L = 300 H hFE =5A R BB = 2 L = 300 H Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/6 SGSF313 Safe Operating AreaThermal Impedance Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 SGSF313 Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/6 SGSF313 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 SGSF313 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6 |
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